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Электронный компонент: BCW89

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1998. 6. 15
1/2
SEMICONDUCTOR
TECHNICAL DATA
BCW69/70/89
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Super Mini Packaged Transistors for Hybrid circuits.
For Complementary with NPN Type BCW71/72, BCV71.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
MARK SPEC
Type Name
Marking
Lot No.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base
Voltage
BCW69/70
V
CBO
-50
V
BCW89
-60
Collector-Emitter
Voltage
BCW69/70
V
CEO
-45
V
BCW89
-60
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-100
mA
Emitter Current
I
E
100
mA
Collector Power Dissipation
P
C
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-65 150
TYPE
MARK
BCW69
H 1
BCW70
H 2
BCW89
H 5
1998. 6. 15
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BCW69/70/89
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter
Breakdown Voltage
BCW69/70
V
(BR)CEO
I
C
=-2mA, I
B
=0
-45
-
-
V
BCW89
-60
-
-
Collector-Base
Breakdown Voltage
BCW69/70
V
(BR)CBO
I
C
=-10 A, I
E
=0
-50
-
-
V
BCW89
-60
-
-
Collector-Emitter
Breakdown Voltage
BCW69/70
V
(BR)CES
I
C
=-10 A, V
BE
=0
-50
-
-
V
BCW89
-60
-
-
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
-5.0
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=-20V, I
E
=0
-
-
-100
nA
Ta=100 , V
CB
=-20V, I
E
=0
-
-
-10
A
DC Current Gain
BCW69/89
h
FE
V
CE
=-5V, I
C
=-10 A
-
90
-
BCW70
-
150
-
BCW69/89
V
CE
=-5V, I
C
=-2mA
120
-
260
BCW70
215
-
500
Base-Emitter Voltage
V
BE(ON)
V
CE
=-5V, I
C
=-2mA
-600
-
-750
mV
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-10mA, I
B
=-0.5mA
-
-720
-
mV
I
C
=-50mA, I
B
=-2.5mA
-
-810
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-10mA, I
B
=-0.5mA
-
-
-300
mV
I
C
=-50mA, I
B
=-2.5mA
-
-180
-
Transition Frequency
f
T
I
C
=-10mA, V
CE
=-5V, f=100MHz
-
150
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
-
7.0
pF
Noise Figure
NF
I
C
=-0.2mA, V
CE
=-5V,
Rg=2k , f=1kHz
-
-
10
dB